? semiconductor components industries, llc, 2015 january, 2015 ? rev. 1 1 publication order number: ntp4813nl/d ntp4813nl power mosfet 30 v, 51 a, single n?channel, to?220ab features ? low r ds(on) to minimize conduction losses ? low capacitance to minimize driver losses ? optimized gate charge to minimize switching losses ? low r g ? these devices are pb?free and are rohs compliant applications ? power motor control ? high current, high side switching ? dc?dc converters maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 30 v gate?to?source v oltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 12.8 a t a = 85 c 9.9 power dissipation r ja (note 1) t a = 25 c p d 3.75 w continuous drain current r ja (note 2) t a = 25 c id 10.2 a t a = 85 c 7.9 power dissipation r ja (note 2) t a = 25 c p d 2.40 w continuous drain current r jc (note 1) t c = 25 c i d 51 a t c = 85 c 39.5 power dissipation r jc (note 1) t c = 25 c p d 60 w pulsed drain current t p =10 s t a = 25 c i dm 154 a current limited by package t a = 25 c i dmaxpkg 95 a operating junction and storage temperature t j , t stg ?55 to +175 c source current (body diode) i s 50 a drain to source dv/dt dv/dt 6 v/ns single pulse drain?to?source avalanche energy (v dd = 24 v, v gs = 10 v, i l = 18 a pk , l = 0.3 mh, r g = 25 eas 48.6 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www. onsemi.com v (br)dss r ds(on) max i d max 30 v 13.1 m @ 10 v 51 a 22 m @ 4.5 v g s n?channel mosfet d see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information to?220ab case 221a style 5 1 2 3 4 marking diagram & pin assignment a = assembly location y = year ww = work week g = pb?free package ntp4813nlg ayww 1 gate 3 source 4 drain 2 drain
ntp4813nl www. onsemi.com 2 thermal resistance maximum ratings parameter symbol value unit junction?to?case (drain) r jc 2.5 c/w junction?to?ambient ? steady state (note 1) r ja 40 junction?to?ambient ? steady state (note 2) r ja 62.5 1. surface?mounted on fr4 board using 1 sq?in pad, 1 oz cu. 2. surface?mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss / t j 24.5 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1 a t j = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.5 v negative threshold temperature coefficient v gs(th) /t j 5.5 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v i d = 20 a 10.5 13.1 m v gs = 4.5 v i d = 20 a 17.6 22 forward transconductance g fs v ds = 15 v, i d = 10 a 6.7 s gate resistance r g t a = 25 c 0.80 charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 12 v 895 pf output capacitance c oss 220 reverse transfer capacitance c rss 120 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v; i d = 30 a 7.7 10.8 nc threshold gate charge q g(th) 1.6 gate?to?source charge q gs 3.4 gate?to?drain charge q gd 3.6 total gate charge q g(tot) v gs = 11.5 v, v ds = 15 v; i d = 30 a 17 nc switching characteristics (note 4) turn?on delay time t d(on) v gs = 4.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 10 ns rise time t r 21.5 turn?off delay time t d(off) 12 fall time t f 3.2 turn?on delay time t d(on) v gs = 11.5 v, v ds = 15 v, i d = 15 a, r g = 3.0 6.3 ns rise time t r 13.4 turn?off delay time t d(off) 17.6 fall time t f 1.6 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntp4813nl www. onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition symbol drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 30 a t j = 25 c 0.95 1.2 v t j = 125 c 0.85 reverse recovery time t rr v gs = 0 v, dis/dt = 100 a/ s, i s = 30 a 14.8 ns charge time t a 8.3 discharge time t b 6.5 reverse recovery charge q rr 5.3 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
ntp4813nl www. onsemi.com 4 typical performance curves 4 v 10 v 10,000 100,000 05 30 2 1 v ds , drain?to?source voltage (v) i d , drain current (a) 0 v gs , gate?t o?source voltage (v) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (a) figure 3. on?resistance vs. gate?to?source voltage v gs , gate?t o?source voltage (v) figure 4. on?resistance vs. drain current and gate voltage i d , drain current (a) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current vs. drain voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) 23 15 10 30 5 3 v ds 10 v t j = 25 c t j = ?55 c t j = 125 c v gs = 4.5 v v gs = 0 v i d = 20 a v gs = 10 v 50 t j = 150 c t j = 125 c 40 0 45 t j = 25 c 20 10 5 v 3 v 6 v 6 1000 4 17 4.5 v 3.6 v 3.8 v 40 10 20 60 30 20 60 10 50 i d = 20 a t j = 25 c v gs = 10 v 100 t j = 25 c 25 t j = 25 c 0.030 0.025 0.020 0.015 0.010 3.0 4.0 5.0 10 9.0 8.0 7.0 6.0 0.03 0.0275 0.025 0.02 0.0175 0.015 0.0125 0.01 0.0075 0.005 10 15 20 45 40 35 30 25 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ?50 ?25 50 175 150 125 100 75 025
ntp4813nl www. onsemi.com 5 typical performance curves c rss 0101525 v ds , drain?to?source voltage (v) c, capacitance (pf) figure 7. capacitance variation 400 0 800 5 t j = 25 c c oss c iss 600 1000 figure 8. gate?to?source and drain?to?source voltage vs. total charge 0 3 0 q g , total gate charge (nc) 15 6 6 5 i d = 30 a v dd = 15 v v gs = 11.5 v t j = 25 c q 2 q t 7 0 0.5 v sd , source?to?drain voltage (v) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) 1 10 100 1 t, time (ns) v gs = 0 v figure 10. diode forward voltage vs. current 100 0.6 0.7 1 .0 5 10 15 t r t d(off) t d(on) t f 10 v dd = 15 v i d = 30 a v gs = 11.5 v 0.8 0.9 20 30 25 t j = 25 c figure 11. maximum rated forward biased safe operating area 0.1 1 100 v ds , drain?to?source voltage (v) 1000 r ds(on) limit thermal limit package limit 10 10 v gs = 20 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s 20 9 1 100 t j , junction temperature ( c) i d = 18 a figure 12. maximum avalanche energy vs. starting junction temperature eas, single pulse drain?to?source avalanche energy (mj) 200 300 700 500 900 100 12 3 24 1 q 1 8 9 10 11 12 13 14 15 1 6 1.5 13.5 4.5 7.5 10.5 v gs , gate?t o?source voltage (v ) i s , source current (a) i d , drain current (a) 50 45 40 35 30 25 20 15 10 5 0 50 15 0 125 100 75 25
ntp4813nl www. onsemi.com 6 typical performance curves figure 13. avalanche characteristics 1000 1 100 pulse width ( s) 0.1 i d , drain current (amps) 10 10 125 c 1 100 100 c 25 c ordering information device package shipping ? NTP4813NLT4G to?220ab (pb?free) 50 units / rail ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntp4813nl www. onsemi.com 7 package dimensions to?220, single gauge case 221a?09 issue ah style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntd4813n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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